Peculiarities of the electron transport in very short period InAs/GaAs superlattices near quantum dot formation
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- 作者：Kulbachinskii ; Vladimir A. ; Lunin ; Roman A. ; Rogozin ; Vasili A. ; Brandt ; Nicolai B. ; Mokerov ; Vladimir G. ; et. al.
- 关键词：73.21.Cd ; 73.21.La ; 73.21.Fg ; Short period superlattice ; Quantum dots ; Photoluminescence
- 刊名：Physica E
- 出版年：2003
- 出版时间：April, 2003
- 年：2003
- 卷：17
- 期：Complete
- 页码：300-302
- 全文大小：128 K
文摘
The photoluminescence, magnetoresistance, Shubnikov-de Haas and Hall effect have been investigated in short period InAs/GaAs superlattices with different numbers of periods (3≤N≤24) and a total thickness of 14nm as a function of InAs layer thickness Q in the range 0.33≤Q≤2.7 monolayer (ML). These superlattices represent a quantum well with average composition In0.16Ga0.84As. Photoluminescence intensity and electron mobility enhancement occur when the InAs layer thickness Q is equal to 0.33 or 2.0ML. When Q≥2.7ML, quantum dots are formed. The mobility of electrons and the anisotropy of resistivity do not depend monotonically on the thickness Q of InAs layers.