High-performance solid-state on-chip supercapacitors based on Si nanowires coated with ruthenium oxide via atomic layer deposition

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• 作者：Wen Zheng^a ; ^{zhengw06@mit.edu} ; Qingmei Cheng^b ; ^{chengqa@bc.edu} ; Dunwei Wang^b ; ^{dunwei.wang@bc.edu} ; Carl V. Thompson^a ; ^{cthomp@mit.edu}
• 关键词：Supercapacitors ; Silicon nanowires ; Ruthenium oxide ; Solid-state ; Specific capacitance ; Power performance
• 刊名：Journal of Power Sources
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：341
• 期：Complete
• 页码：1-10
• 全文大小：3218 K
• 卷排序：341

文摘

Solid-state supercapacitors made using ruthenium oxide coated silicon nanowires. Fabrication process is compatible with silicon integrated circuit processing. Ruthenium oxide provides a three order of magnitude increase in capacitance. Specific capacitance scales with the total nanowire surface area. High specific energies and cyclability without sacrificing power performance.