Split gate SOI trench LDMOS with low-resistance channel

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• 作者：Ying-Wang^a ; ^{wangying7711@yahoo.com} ; Yi-fan Wang^b ; Yan-juan Liu^a ; Yang-Wang^b
• 关键词：Trench LDMOSFET ; Split gate ; Specific on-state resistance (Ron ; sp) ; Breakdown voltage (BV) ; Specific gate-charge (Qg ; sp)
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：399-406
• 全文大小：2857 K
• 卷排序：102

文摘

The split gate SOI trench LDMOS with low on-resistance channel (SGTL-LDMOS) structure is proposed and investigated. The SGTL-LDMOS shows a reduction in specific on-state resistance (Ron,sp). The SGTL-LDMOS reduces the specific gate-charge (Qg,sp) and increases the breakdown voltage.