Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film
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- 作者：Xiaoning Zhao ; Mengyao Li ; Haiyang Xu ; hyxu@nenu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhongqiang Wang ; wangzq752@nenu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Cen Zhang ; Weizhen Liu ; Jiangang Ma ; Yichun Liu
- 关键词：Resistive switching ; Forming free ; Nanoporous ; Titanium oxynitride ; Conductive filament
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：25 January 2016
- 年：2016
- 卷：656
- 期：Complete
- 页码：612-617
- 全文大小：1398 K
文摘
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Nanoporous TiOxNy thin films were produced by a TiN oxidation process.
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A forming-free behavior based on pre-formed Ag CF has been demonstrated.
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Stable and high-speed switching behavior is observed in Ag/TiOxNy/Pt device.
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The switching mechanism is attributed to the formation and rupture of Ag CF.
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