Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO₂

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• 作者：Alessandro Grossi ; ^{alessandro.grossi@unife.it} ; Cristian Zambelli ; Piero Olivo ; Alberto Crespo-Yepes¹ ; Javier Martin-Martinez¹ ; Rosana Rodrí ; guez¹ ; Monserrat Nafria¹ ; Eduardo Perez² ; Christian Wenger²
• 关键词：RRAM array ; Forming ; Read window ; Energy saving
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：187-193
• 全文大小：1206 K
• 卷排序：128

文摘

In this work, a comparison between 1T-1R RRAM arrays, manufactured either with amorphous or poly-crystalline Metal–Insulator–Metal cells, is reported in terms of performance, reliability, Set/Reset operations energy requirements, intra-cell and inter-cell variability during 10k endurance cycles and 100k read disturb cycles. The modeling of the 1T-1R RRAM array cells has been performed with two different approaches: (i) a physical model like the Quantum Point Contact (QPC) model was used to find the relationship between the reliability properties observed during the endurance and the read disturb tests with the conductive filament properties; (ii) a compact model to be exploited in circuit simulations tools which models the I–V characteristics of each memory cells technology.