Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity
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- 作者：Zhijuan XuaAuthor Vitae ; Shisheng Lina ; b ; shishenglin@zju.edu.cn" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Xiaoqiang LiaAuthor Vitae ; Shengjiao ZhangaAuthor Vitae ; Zhiqian WuaAuthor Vitae ; Wenli XuaAuthor Vitae ; Yanghua LuaAuthor Vitae ; Sen XuaAuthor Vitae
- 关键词：Molybdenum disulfide ; GaAs ; Heterostructure ; Photodetector
- 刊名：Nano Energy
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：23
- 期：Complete
- 页码：89-96
- 全文大小：2302 K
文摘
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MoS2/GaAs heterostructure self-driven photodetector achieves the high detectivity of 3.5×1013 Jones.
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Detectivity is further increased to 1.9×1014 Jones by employing photo-induced doping and interface designing.
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The MoS2 based heterostructure photodetector sealed with PMMA is stable after storage in air for one month.
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