Formation of a-Si:H and a-Si_1-xC_x :H nanowires by Ag-assisted electroless etching in aqueous HF/AgNO₃ solution

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• 作者：Rachida Douani^a ; Ga&#xeb ; lle Piret^b ; ^{gaelle.offranc@polytechnique.edu"" rel=""nofollow} ; Toufik Hadjersi^c ; Jean-No&#xeb ; l Chazalviel^b ; Ionel Solomon^b
• 关键词：Silicon ; Silicon carbide ; Nanowires ; Electroless chemical etching ; Amorphous alloys ; Porous silicon ; Scanning Electron Microscopy
• 刊名：Thin Solid Films
• 出版年：2011
• 出版时间：1 June 2011
• 年：2011
• 卷：519
• 期：16
• 页码：5383-5387
• 全文大小：686 K

文摘

The formation of hydrogenated amorphous silicon–carbon alloy (a-Si_1-xC_x:H) nanowires is studied for different carbon concentrations (0–7 % ) by using Ag-assisted electroless etching of the thin a-Si_1-xC_x:H films deposited by plasma-enhanced chemical vapour deposition from silane/methane gas mixtures. The nanowires morphologies (length, density, …), studied by scanning electron microscopy, strongly depend on the concentration of the etchant (aqueous solution of hydrofluoric acid and silver nitrate), the etching time, and the carbon concentration of the deposited layer.