Crystallographic orientation dependence of dielectric response in lead strontium titanate thin films

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• 作者：Kui Li ; Denis R¨¦miens ; Jean Costecalde ; Nossikpendou Sama ; Gang Du ; Tao Li ; Xianlin Dong ; Genshui Wang
• 关键词：A1. Characterization ; A3. Magnetron sputtering ; B1. Perovskites ; B2. Dielectric materials
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：15 August, 2013
• 年：2013
• 卷：377
• 期：Complete
• 页码：143-146
• 全文大小：867 K

文摘

This investigation presents the growth of (100), (110) and preferential (111)-oriented Pb_0.6Sr_0.4TiO₃ thin films prepared on different orientations LaNiO₃ buffered silicon substrates via radio-frequency magnetron sputtering method. The effects of the orientation on microstructure and dielectric response were systematically investigated. The capacitance-voltage property versus the crystallographic orientation analysis revealed that preferential (111)-orientation film possesses the largest relative permittivity and tunability of 1180 and 84 % (at 400 kV/cm) respectively, which are much higher than those of (100)- and (110)-oriented thin films. These results suggest preferential (111)-orientation films as promising candidates for microwave tunable devices.