文摘
HR XPS spectra of Nb 3d, Si 2p, O 1s were probed for Si/Nb/Si trilayers prepared by magnetron sputtering to clarify the Hall coefficient variation as a function of Nb layer thickness. Strong boundary scattering, enhanced by the presence of silicon ions in the layer close to the interface/s is a main factor leading to sign change of the Hall coefficient. Theoretical concentration/depth profile as a function of sputtering determined by SESSA after optimization of the model system gives good agreement with experiment.