Synthesis of aluminum nitride thin films by filtered arc ion plating deposition

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• 作者：Xubo Yan ; Yuliang Dong ; Haiqing Li ; Jun Gong ; Chao Sun
• 关键词：Filtered arc ion plating ; Aluminum nitride ; Thin films ; Microstructure ; Deposition rate ; Transmittance
• 刊名：Materials Letters
• 出版年：2010
• 出版时间：15 June 2010
• 年：2010
• 卷：64
• 期：11
• 页码：1261-1263
• 全文大小：385 K

文摘

Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N₂) pressure of 0.90 Pa and a bias voltage of − 400 V, the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75 % transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications.