Distance-independent lateral photovoltaic effect in a-Si:H/c-Si p-i-n structure with the aid of bias voltage
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- 作者：Jihong Liua ; Lihong Zhangb ; Yanan Liua ; Shuang Qiaoa ; sqiao@hbu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guoying Yana ; Shufang Wanga ; sfwang@hbu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Guangsheng Fua
- 关键词：Semiconductors ; Optical materials and properties ; Thin films
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：168
- 期：Complete
- 页码：48-51
- 全文大小：1214 K
文摘
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The position sensitivity is strongly dependent on the contact distance.
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The LPE improves greatly with the aid of bias voltage.
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Position sensitivity increases linearly with laser power.
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Position sensitivity is independent of contact distance under bias voltage.
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These results were induced by the enhanced SB height.