13.7% Efficiency graphene-gallium arsenide Schottky junction solar cells with a P3HT hole transport layer
详细信息 查看全文
- 作者：Hang HeAuthor Vitae ; Xuegong Yu ; yuxuegong@zju.edu.cn" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Yichao WuAuthor Vitae ; Xinhui MuAuthor Vitae ; Haiyan ZhuAuthor Vitae ; Shuai YuanAuthor Vitae ; Deren Yang ; mseyang@zju.edu.cn" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae
- 关键词：Graphene ; Gallium arsenide ; P3HT ; TFSA ; Antireflection
- 刊名：Nano Energy
- 出版年：2015
- 出版时间：September 2015
- 年：2015
- 卷：16
- 期：Complete
- 页码：91-98
- 全文大小：2243 K
文摘
- •
A new structure of Gr–GaAs solar cell using P3HT as hole transport layer has been reported.
- •
The performances of Gr–GaAs solar cells get significantly increased due to the introduction of P3HT layer.
- •
Initial PCE of 6.84% has been obtained for the Gr–GaAs solar cells.
- •
By TFSA doping and antireflective film application, a highest efficiency of 13.7% has been achieved for Gr–GaAs solar cells.