Effect of a novel chelating agent on defect removal during post-CMP cleaning
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- 作者：Jiao Honga ; b ; hongjiao072095@163.com" class="auth_mail" title="E-mail the corresponding author ; Xinhuan Niua ; b ; xhniu@hebut.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yuling Liua ; b ; Yangang Hea ; b ; Baoguo Zhanga ; b ; Juan Wanga ; b ; Liying Hana ; b ; Chenqi Yana ; b ; Jin Zhanga ; b
- 关键词：Post-CMP cleaning ; Alkaline chemicals ; Defect removal ; PVA brush cleaning
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：378
- 期：Complete
- 页码：239-244
- 全文大小：2336 K
文摘
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The post-CMP cleaning of wafers has become a key step in successful CMP processing.
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The polyvinyl alcohol (PVA) brush is the most effective method for post-CMP in situ cleaning.
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The chemicals used in this chapter are alkaline.
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Emphasis on the effect of the different concentration of the chelating agent on defect removal is provided.
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The mechanisms under the post-CMP cleaning process to realize optimum manufacturing conditions were studied.