Study of the power capability of LDMOS and the improved methods

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• 作者：Zhilin Sun ; Weifeng Sun ; Yangbo Yi and Longxing Shi
• 刊名：Microelectronics Reliability
• 出版年：2006
• 出版时间：May-June 2006
• 年：2006
• 卷：46
• 期：5-6
• 页码：1001-1005
• 全文大小：229 K

文摘

In this paper, the failure process of LDMOS is analyzed. It is found that three peak electric fields locate in the Si/SiO₂ interface of LDMOS, which result in three hot spots. From the time the device turns on, the first peak electric field increases and the second one remains constant while the third one decreases. The device fails due to the hot spots induced by the first and the second peak electric fields. Power capability can be enhanced by reducing these two peak electric fields. Methods to improve the power capability are proposed.