This letter provides an approach for the intentional introduction of the VZn-NO complex. This letter provides a completed set of characterizations for identifying the VZn-NO complex. Tellurium at zinc site can form high-solubility ZnTeO alloy and can create stable complex TeZn-NO. ZnO film samples with hole as major carriers have been realized for a wide window of nitrogen doping concentration. This study opens a new path for the acceptor-isovalence p-type doping scheme.