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Highly conductive Nb doped BaSnO3 thin films on MgO substrates by pulsed laser deposition
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文摘

BNSO films were epitaxially grown on MgO substrates by pulsed laser deposition.

The lowest room temperature resistivity value of 4.81 × 10−4 Ω cm was obtained.

All the films exhibit a high transmittance of more than 80% in the visible range.

The variation of Eg with Nb doping content was explained by Burstein-Moss effect.

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