Preparation and optical, nanomechanical, negative thermal expansion properties of Sc₂W₃O₁₂ thin film grown by pulsed laser deposition

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• 作者：Hongfei Liu^a ; ^{liuhf@yzu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Lu Yang^a ; Zhiping Zhang^a ; Kunmin Pan^a ; Fang Zhang^b ; Honghui Cheng^c ; Xianghua Zeng^a ; Xiaobing Chen^a
• 关键词：Negative thermal expansion ; Scandium tungstate ; Thin film ; Pulsed laser deposition
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：15 May 2016
• 年：2016
• 卷：42
• 期：7
• 页码：8809-8814
• 全文大小：1988 K

文摘

Negative thermal expansion Sc₂W₃O₁₂ thin films have been grown on silicon and quartz substrates by pulsed laser deposition (PLD). The effects of oxygen pressure, substrate temperature and annealing temperature on the morphologies and phase composition of the Sc₂W₃O₁₂ thin films were systematically investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The negative thermal expansion, optical and nanomechanical properties of the Sc₂W₃O₁₂ thin films were characterized by high temperature X-ray diffraction, spectrophotometry and nanoindentation. The results indicate as-deposited Sc₂W₃O₁₂ thin films to be amorphous. Orthorhombic Sc₂W₃O₁₂ thin films were observed to form by heating at 1000 °C for 7 min in air. The Sc₂W₃O₁₂ thin film deposited at 500 °C under an oxygen pressure of 20 Pa has the lowest root mean square (RMS) roughness value. Meanwhile it also shows the optimum optical performance with an average transmission of over 85%. The Young's modulus (E) of the Sc₂W₃O₁₂ thin film is 153.40 GPa and the hardness (H) is 8.62 GPa. The orthorhombic Sc₂W₃O₁₂ thin film exhibits an anisotropic negative thermal expansion with an average linear thermal expansion coefficient was calculated to be −3.0×10⁻⁶ K⁻¹ in the temperature range from 25 °C to 600 °C.