Improvement of thermoelectric properties of Cu3SbSe4 compound by In doping
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- 作者：Dan Zhang ; Junyou Yang jyyang@mail.hust.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Qinghui Jiang ; Liangwei Fu ; Ye Xiao ; Yubo Luo ; Zhiwei Zhou
- 关键词：Cu3SbSe4 ; In-doping ; Thermoelectric properties
- 刊名：Materials & Design
- 出版年：2016
- 出版时间：15 May 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：150-154
- 全文大小：1145 K
文摘
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In is experimentally found to be a promising and efficient hole dopant in Cu3SbSe4.
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We also prove that In occupies the site of Sb rather than that of Cu theoretically.
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Doping In can effectively increase the power factor at elevated temperature and decrease the thermal conductivity.
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A maximum ZT value of 0.50 (at 648K) is obtained for the 0.3% In doped sample.
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