Integration of ZnO nanowires in gated field emitter arrays for large-area vacuum microelectronics applications

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• 作者：Long Zhao ; Yuxiang Chen ; Yuanming Liu ; Guofu Zhang ; Juncong She ; Shaozhi Deng ; Ningsheng Xu ; Jun Chen ; ^{stscjun@mail.sysu.edu.cn}
• 关键词：Field emitter arrays ; ZnO nanowires ; Gated structure ; Microfabrication
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：17
• 期：1
• 页码：85-91
• 全文大小：1636 K
• 卷排序：17

文摘

Comb-shape-gate structure ZnO nanowire field emitter arrays were fabricated. The back contact affects the emission uniformity of ZnO nanowires. Addressing capability of the gated ZnO nanowire field emitter arrays was verified. Display device using ZnO nanowire field emitter arrays was achieved.