Low-temperature sintering and microwave dielectric properties of LiF-doped CaMg_1?xZn_xSi₂O₆ ceramics

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• 作者：Jie Zhang ; Yuanyuan Zhou ; Zhenxing Yue ; ^{yuezhx@mail.tsinghua.edu.cn}
• 关键词：C. Microwave dielectric properties ; D. Low-temperature co-fired ceramics ; D. Silicates
• 刊名：Ceramics International
• 出版年：2013
• 出版时间：March, 2013
• 年：2013
• 卷：39
• 期：2
• 页码：2051-2058
• 全文大小：1239 K

文摘

The diopside ceramics, CaMg_1?xZn_xSi₂O₆ (x=0-0.3), were synthesized via the solid-state reaction method. Zn²⁺ substitution for Mg²⁺ can markedly lower the densification temperature and improve the microwave dielectric properties of CaMgSi₂O₆ ceramics. For x=0.1, CaMg_0.9Zn_0.1Si₂O₆ ceramics, can be sintered at 1200 ¡ãC and exhibit good microwave dielectric properties of ¦Å_r=7.88, Qf=76,100 GHz and ¦Ó_f=?22.5 ppm/¡ãC. LiF addition was proved to be effective to lower the sintering temperature to ¡«900 ¡ãC without degrading the dielectric properties apparently. The CaMg_0.9Zn_0.1Si₂O₆ ceramics doped with 0.6 wt % LiF can be sintered in the temperature range of 900-975 ¡ãC and have excellent dielectric properties of ¦År¡«7.7, Qf¡«70,000 GHz and ¦Ó_f¡«?25 ppm/¡ãC. With low sintering temperature and good dielectric properties, these LiF-doped diopside ceramics are promising materials for LTCC integration applications.