Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs

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• 作者：Jiangfeng Du^a ; ^{jfdu@uestc.edu.cn} ; Kang Wang^a ; Yong Liu^a ; Zhiyuan Bai^a ; Yang Liu^a ; Zhihong Feng^b ; Shaobo Dun^b ; Qi Yu^a
• 关键词：AlGaN/GaN ; HEMT ; Small-signal ; Mesa ; Capacitance
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：1-5
• 全文大小：1429 K
• 卷排序：129

文摘

AlGaN/GaN HEMTs with 90 nm gate-length are fabricated in this paper. A small-signal model of GaN HEMTs considering mesa edge capacitances is provided. The maximum fT and fmax of the devices are 84.8 G Hz and 128.2 G Hz, respectively. The gate capacitances of AlGaN/GaN HEMTs with different gate widths are extracted.