Invisible growth of microstructural defects in graphene chemical vapor deposition on copper foil

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• 作者：Yanhui Zhang^a ; Haoran Zhang^a ; Feng Li^b ; Haibo Shu^b ; ^{shu123hb@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Zhiying Chen^a ; Yanping Sui^a ; Yaqian Zhang^a ; Xiaoming Ge^a ; Guanghui Yu^a ; ^{ghyu@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhi Jin^c ; Xinyu Liu^c
• 刊名：Carbon
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：96
• 期：Complete
• 页码：237-242
• 全文大小：2093 K

文摘

Microstructural defects (MSDs) in graphene are a primary negative factor for the crystal quality and electrical properties of graphene and there is little knowledge about their formation. Here we report the formation mechanism of MSDs in graphene domains during the CVD growth on Cu substrate. Hydrogen-etching results show that an etched graphene hole corresponds to the position of a MSD that appears not only at the nucleation sites of graphene. Based on density-functional calculations, a hidden growth mechanism of MSDs that is driven by defects/impurities (e.g., Cu clusters/particles) on substrate surfaces is proposed. Our model indicates that the number of MSDs in a graphene domain depends on the density of surface defects on the Cu substrate and we demonstrate that MSDs in graphene can be significantly reduced by the careful substrate polishing.