Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy
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- 作者：Xinke Liua ; Jiazhu Hea ; Dan Tanga ; Qiang Liub ; Jiao Wenb ; Wenjie Yub ; casan@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Youming Lua ; Deliang Zhua ; Wenjun Liua ; Peijiang Caoa ; Sun Hana ; Jisheng Panc ; Wenjun Liud ; Kah Wee Ange ; Zhubing Hef
- 关键词：Multilayer MoS2 ; High-k ; Band alignment ; X-ray photoelectron spectroscopy
- 刊名：Journal of Alloys and Compounds
- 出版年：2015
- 出版时间：25 November 2015
- 年：2015
- 卷：650
- 期：Complete
- 页码：502-507
- 全文大小：1073 K
文摘
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The band alignment of ALD-Al2O3/ML-MoS2 was characterized using XPS.
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The 螖EV and 螖EC of ALD-Al2O3/ML-MoS2 is found to be 4.10 eV and 3.41 eV, respectively.
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ALD-Al2O3 served as the gate dielectric for n-type ML-MoS2 based FETs has advantage of ALD-SiO2.