Test of micropixel avalanche photodiodes

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• 作者：N. Anfimov ; I. Chirikov-Zorin ; Z. Krumshteyn ; R. Leitner ; A. Olchevski
• 关键词：MAPD ; Photodiode ; Photon detection efficiency ; Micropixel ; Avalanche ; Silicon ; Spectrum ; Gain ; Capacitance
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2007
• 出版时间：1 March 2007
• 年：2007
• 卷：572
• 期：1
• 页码：413-415
• 全文大小：126 K

文摘

The micropixel avalanche photodiode (MAPD) is a novel photodetector with a multipixel intrinsic structure on the common silicon substrate. The typical size of each pixel is 20–30 μm and the density is about 10³ mm⁻². Each pixel works on the common load in the Geiger mode, where the discharge is limited by an individual quenching resistor (negative feedback like in gas Geiger counter) included in each pixel feeding chain located on the common substrate. In the Geiger mode one may get an amplification factor for a single photoelectron at the level of 10⁶ at room temperature. Measurements of gain, photon detection efficiency, one photoelectron resolution, noise and dark current for different types of MAPD were performed and compared.