Different crystallization processes of as-deposited amorphous Ge₂Sb₂Te₅ films on nano- and picosecond single laser pulse irradiation

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• 作者：Ke Zhang^a ; Simian Li^b ; Guangfei Liang^a ; Huan Huang^a ; Yang Wang^a ; ^{ywang@siom.ac.cn} ; Tianshu Lai^b ; ¹ ; ^{stslts@zsu.edu.cn} ; Yiqun Wu^a
• 关键词：Phase-change material ; Nanosecond laser pulse ; Picosecond laser pulse ; Crystallization ; Extra-non-equilibrium process
• 刊名：Physica B
• 出版年：2012
• 出版时间：1 July, 2012
• 年：2012
• 卷：407
• 期：13
• 页码：2447-2450
• 全文大小：455 K

文摘

The crystallization dynamics of as-deposited amorphous Ge₂Sb₂Te₅ films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed.