Low-temperature plasma exfoliated n-doped graphene for symmetrical electrode supercapacitors

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• 作者：Keliang Wang^aAuthor Vitae ; Ming Xu^dAuthor Vitae ; Yan Gu^eAuthor Vitae ; Zhengrong Gu^a ; ^{zhengrong.gu@sdstate.edu}Author Vitae ; Jun Liu^b ; ^{jun.liu@pnnl.gov}Author Vitae ; Qi Hua Fan^c ; ^{qfan@egr.msu.edu}Author Vitae
• 关键词：Plasma ; Graphene ; Exfoliation ; N-doped ; Supercapacitor
• 刊名：Nano Energy
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：31
• 期：Complete
• 页码：486-494
• 全文大小：1341 K
• 卷排序：31

文摘

A novel efficient plasma exfoliation method was developed to graphene preparation. The plasma exfoliation mechanism was demonstrated. N-doped graphene was successfully prepared via plasma exfoliation. High capacitance performance (312 F g−1) was exhibited for prepared GO-PPY-CH4.