Ballistic InAs Nanowire Transistors
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- 作者：Steven Chuang ; Qun Gao ; Rehan Kapadia ; Alexandra C. Ford ; Jing Guo ; Ali Javey
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：February 13, 2013
- 年：2013
- 卷：13
- 期：2
- 页码：555-558
- 全文大小：297K
- 年卷期：v.13,no.2(February 13, 2013)
- ISSN：1530-6992
文摘
Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as 150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi鈥檚 golden rule and a numerical Schr枚dinger鈥揚oisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of 60 nm, owing to the long mean free path of electrons in InAs NWs.