Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy

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• 作者：Anupam Roy ; Hema C. P. Movva ; Biswarup Satpati ; Kyounghwan Kim ; Rik Dey ; Amritesh Rai ; Tanmoy Pramanik ; Samaresh Guchhait ; Emanuel Tutuc ; Sanjay K. Banerjee
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 23, 2016
• 年：2016
• 卷：8
• 期：11
• 页码：7396-7402
• 全文大小：449K
• ISSN：1944-8252

文摘

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.