Functional Interfaces for Transparent Organic Electronic Devices: Consistent Description of Charge Injection by Combining In Situ XPS and Current Voltage Measurements with Self-Consistent Modeling

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• 作者：Jürgen Gassmann ; Sergey V. Yampolskii ; Yuri A. Genenko ; Thilo C.G. Reusch ; Andreas Klein
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：May 19, 2016
• 年：2016
• 卷：120
• 期：19
• 页码：10466-10475
• 全文大小：591K
• 年卷期：0
• ISSN：1932-7455

文摘

The interface properties between Sn-doped In₂O₃ (ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current–voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current–voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σ_UPS = 0.22 eV and that derived from simulations is σ_sim = 0.23 eV.