Field-Effect Transistors from Lithographically Patterned Cadmium Selenide Nanowire Arrays
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- 作者：Talin Ayvazian ; Wendong Xing ; Wenbo Yan ; Reginald M. Penner
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2012
- 出版时间：September 26, 2012
- 年：2012
- 卷：4
- 期：9
- 页码：4445-4452
- 全文大小：519K
- 年卷期：v.4,no.9(September 26, 2012)
- ISSN：1944-8252
文摘
Field-effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrodeposition (LPNE) process on SiO2/Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 掳C 脳 4 h either with or without exposure to CdCl2 in methanol鈥攁 grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter from 10 to 80 nm as determined by grazing incidence X-ray diffraction and to convert the crystal structure from cubic to wurtzite. Measured transfer characteristics showed an increase of the field effect mobility (渭eff) by an order of magnitude from 1.94 脳 10鈥? cm2/(V s) to 23.4 脳 10鈥? cm2/(V s) for pc-CdSe nanowires subjected to the CdCl2 treatment. The CdCl2 treatment also reduced the threshold voltage (from 20 to 5 V) and the subthreshold slope (by 35%). Transfer characteristics for pc-CdSe NWFETs were also influenced by the channel length, L. For CdCl2-treated nanowires, 渭eff was reduced by a factor of eight as L increased from 5 to 25 渭m. These channel length effects are attributed to the presence of defects including breaks and constrictions within individual pc-CdSe nanowires.