Graphene鈥揋raphite Oxide Field-Effect Transistors

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• 作者：Brian Standley ; Anthony Mendez ; Emma Schmidgall ; Marc Bockrath
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1165-1169
• 全文大小：279K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

Graphene鈥檚 high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO₂ or HfO₂. In contrast, we have studied the use of an ultrathin layered material, graphene鈥檚 insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO₂, typically 1鈥? 脳 10⁸ V/m, while its dielectric constant is slightly higher, 魏 鈮?4.3.

Keywords:

graphene; graphite oxide; eld-effect transistor; layered dielectric