Quantum Dot/Siloxane Composite Film Exceptionally Stable against Oxidation under Heat and Moisture
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- 作者：Hwea Yoon KimDa-Eun Yoon ; Junho Jang ; Daewon Lee ; Gwang-Mun Choi ; Joon Ha Chang ; Jeong Yong LeeDoh C. Lee ; Byeong-Soo Bae
- 刊名：Journal of the American Chemical Society
- 出版年：2016
- 出版时间：December 21, 2016
- 年：2016
- 卷：138
- 期：50
- 页码：16478-16485
- 全文大小：575K
- ISSN：1520-5126
文摘
We report on the fabrication of a siloxane-encapsulated quantum dot (QD) film (QD-silox film), which exhibits stable emission intensity for over 1 month even at elevated temperature and humidity. QD-silox films are solidified via free radical addition reaction between oligosiloxane resin and ligand molecules on QDs. We prepare the QD-oligosiloxane resin by sol–gel condensation reaction of silane precursors with QDs blended in the precursor solution, forgoing ligand-exchange of QDs. The resulting QD-oligosiloxane resin remains optically clear after 40 days of storage, in contrast to other QD-containing resins which turn turbid and ultimately form sediments. QDs also disperse uniformly in the QD-silox film, whose photoluminescence (PL) quantum yield (QY) remains nearly unaltered under harsh conditions; for example, 85 °C/5% relative humidity (RH), 85 °C/85% RH, strongly acidic, and strongly basic environments for 40 days. The QD-silox film appears to remain equally emissive even after being immersed into boiling water (100 °C). Interestingly, the PL QY of the QD-silox film noticeably increases when the film is exposed to a moist environment, which opens a new, facile avenue to curing dimmed QD-containing films. Given its excellent stability, we envision that the QD-silox film is best suited in display applications, particularly as a PL-type down-conversion layer.