Creating a Stable Oxide at the Surface of Black Phosphorus

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• 作者：M. T. Edmonds ; A. Tadich ; A. Carvalho ; A. Ziletti ; K. M. O鈥橠onnell ; S. P. Koenig ; D. F. Coker ; B. 脰zyilmaz ; A. H. Castro Neto ; M. S. Fuhrer
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：July 15, 2015
• 年：2015
• 卷：7
• 期：27
• 页码：14557-14562
• 全文大小：314K
• ISSN：1944-8252

文摘

The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P₂O₅ forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.