Quasi-Aligned Ga2O3 Nanowires Grown on Brass Wire Meshes and Their Electrical and Field-Emission Properties

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• 作者：Yang Huang ; Zongli Wang ; Qiang Wang ; Changzhi Gu ; Chengchun Tang ; Yoshio Bando ; Dmitri Golberg
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：February 5, 2009
• 年：2009
• 卷：113
• 期：5
• 页码：1980-1983
• 全文大小：240K
• 年卷期：v.113,no.5(February 5, 2009)
• ISSN：1932-7455

文摘

Quasi-aligned β-Ga₂O₃ nanowires were fabricated using the brass wire meshes as the substrates. The nanowire roots were tightly connected to the brass wire surfaces that resulted in a very good physical and electrical contact. Electrical measurements showed that the ohmic contacts were achieved and the resistivities of the nanowires were 300−500 Ω·cm. The Ga₂O₃ nanowire/brass wire hybrid structures exhibited an enhanced field-emission performance. A turn-on field of ∼6.2 V·μm⁻¹ at an emission current density of 10 μA·cm⁻² and an emission current fluctuation within ±13% at a mean field-emission current density of ∼0.56 μA·cm⁻² were measured.