Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio

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• 作者：Gwangtaek Oh ; Jin-Soo Kim ; Ji Hoon Jeon ; EunA Won ; Jong Wan Son ; Duk Hyun Lee ; Cheol Kyeom Kim ; Jingon Jang ; Takhee Lee ; Bae Ho Park
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：July 28, 2015
• 年：2015
• 卷：9
• 期：7
• 页码：7515-7522
• 全文大小：493K
• ISSN：1936-086X

文摘

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.