Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

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• 作者：Chiyui Ahn ; Scott W. Fong ; Yongsung Kim ; Seunghyun Lee ; Aditya Sood ; Christopher M. Neumann ; Mehdi Asheghi ; Kenneth E. Goodson ; Eric Pop ; H.-S. Philip Wong
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6809-6814
• 全文大小：413K
• ISSN：1530-6992

文摘

Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge₂Sb₂Te₅ (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have 鈭?0% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 10⁵ cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.