Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits
详细信息 查看全文
- 作者：Chao-Hui Yeh ; Yi-Wei Lain ; Yu-Chiao Chiu ; Chen-Hung Liao ; David Ricardo Moyano ; Shawn S. H. Hsu ; Po-Wen Chiu
- 刊名：ACS Nano
- 出版年：2014
- 出版时间：August 26, 2014
- 年：2014
- 卷：8
- 期：8
- 页码：7663-7670
- 全文大小：632K
- ISSN：1936-086X
文摘
Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.