Monolithically Integrated High-β Nanowire Lasers on Silicon

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• 作者：B. Mayer ; L. Janker ; B. Loitsch ; J. Treu ; T. Kostenbader ; S. Lichtmannecker ; T. Reichert ; S. Mork?tter ; M. Kaniber ; G. Abstreiter ; C. Gies ; G. Koblmüller ; J. J. Finley
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：January 13, 2016
• 年：2016
• 卷：16
• 期：1
• 页码：152-156
• 全文大小：347K
• ISSN：1530-6992

文摘

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III–V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs–AlGaAs core–shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input–output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.