Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen

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• 作者：Sukanya Murali ; Anand Deshpande ; and Christos G. Takoudis
• 刊名：Industrial & Engineering Chemistry Research
• 出版年：2005
• 出版时间：August 3, 2005
• 年：2005
• 卷：44
• 期：16
• 页码：6387 - 6392
• 全文大小：275K
• 年卷期：v.44,no.16(August 3, 2005)
• ISSN：1520-5045

文摘

This study focuses on modeling the chemical vapor deposition (CVD) of tantalum oxide, a highdielectric constant material, on silicon-based substrates. A three-dimensional model is developedand described for a CVD reactor in which tantalum ethoxide and oxygen precursors are used.The effect of pressure and substrate temperature on the deposition rate of thin films of tantalumoxide is studied at system pressures of 1-4 Torr and substrate temperatures in the range of300-500 ges/entities/deg.gif">C. Our model predictions and experimental data of a custom-made cold-wall CVDreactor are found to be in satisfactory agreement. The deposition rate is found to increasesignificantly with increasing substrate temperature; this suggests that the tantalum oxide CVDis surface-reaction-controlled.