文摘
To synthesize a thermally robust Nib>1–xb>Ptb>xb>Si film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Nib>1–xb>Ptb>xb>Si film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Nib>1–xb>Ptb>xb>Si film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.