Ionic Liquid Gating of Suspended MoS2 Field Effect Transistor Devices

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• 作者：Fenglin Wang ; Petr Stepanov ; Mason Gray ; Chun Ning Lau ; Mikhail E. Itkis ; Robert C. Haddon
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：August 12, 2015
• 年：2015
• 卷：15
• 期：8
• 页码：5284-5288
• 全文大小：312K
• ISSN：1530-6992

文摘

We demonstrate ionic liquid (IL) gating of suspended few-layer MoS₂ transistors, where ions can accumulate on both exposed surfaces. Upon application of IL, all free-standing samples consistently display more significant improvement in conductance than substrate-supported devices. The measured IL gate coupling efficiency is up to 4.6 脳 10¹³ cm^鈥? V^鈥?. Electrical transport data reveal contact-dominated electrical transport properties and the Schottky emission as the underlying mechanism. By modulating IL gate voltage, the suspended MoS₂ devices display metal鈥搃nsulator transition. Our results demonstrate that more efficient charge induction can be achieved in suspended two-dimensional (2D) materials, which with further optimization, may enable extremely high charge density and novel phase transition.