Adsorption of Diatomic Interhalogens on the Si(100) and Ge(100) Surfaces

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• 作者：Hsiao-Ying Hou ; Hsin-Hua Wu ; Jen-Yang Chung ; Deng-Sung Lin
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：July 14, 2011
• 年：2011
• 卷：115
• 期：27
• 页码：13262-13267
• 全文大小：905K
• 年卷期：v.115,no.27(July 14, 2011)
• ISSN：1932-7455

文摘

This work investigates the adsorption of diatomic interhalogens (XY = ICl and IBr) and hydrogen halides (HX = HBr and HCl) on Si(100) and Ge(100) surfaces by synchrotron radiation core-level photoemission and scanning tunneling microscopy (STM). It was found that mixed adsorbates (X and Y) or (H and X) each terminate a surface dangling bond while preserving the dimer structure. The coverage ratios of Cl/I and Br/I are slightly below the stoichiometric value of 1 for Si(100):ICl (the ICl-passivated Si(100) surface) and Si(100):IBr, respectively, but 1.4 for Ge(100):ICl. The X/H coverage ratios for HCl and Si(100):HBr are also less than 1. The mixed adsorbate system form well-ordered or partially ordered structures for chlorine-contained molecules on Si(100), but no adsorbate ordering is observed for bromide-contained molecules. In a sequel paper, we will present ab initio calculations for the energetics for the Si(100) surface with two mixed adsorbates to provide a more in-depth understanding of the experimental findings presented here.