CuSCN-Based Inverted Planar Perovskite Solar Cell with an Average PCE of 15.6%

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• 作者：Senyun Ye ; Weihai Sun ; Yunlong Li ; Weibo Yan ; Haitao Peng ; Zuqiang Bian ; Zhiwei Liu ; Chunhui Huang
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3723-3728
• 全文大小：312K
• ISSN：1530-6992

文摘

Although inorganic hole-transport materials usually possess high chemical stability, hole mobility, and low cost, the efficiency of most of inorganic hole conductor-based perovskite solar cells is still much lower than that of the traditional organic hole conductor-based cells. Here, we have successfully fabricated high quality CH₃NH₃PbI₃ films on top of a CuSCN layer by utilizing a one-step fast deposition-crystallization method, which have lower surface roughness and smaller interface contact resistance between the perovskite layer and the selective contacts in comparison with the films prepared by a conventional two-step sequential deposition process. The average efficiency of the CuSCN-based inverted planar CH₃NH₃PbI₃ solar cells has been improved to 15.6% with a highest PCE of 16.6%, which is comparable to that of the traditional organic hole conductor-based cells, and may promote wider application of the inexpensive inorganic materials in perovskite solar cells.