A modification of the modulated elemental reactants synthetic technique was developed and used to synthesize eleven members of the [(SnSe)
1.15]
m(TaSe
2)
n family of compounds, with
m and
n equal to integer values between 1 and 6. Each of the intergrowth compounds contained highly oriented intergrowths of SnSe bilayers and TaSe
2 monolayers with abrupt interfaces perpendicular to the
c-axis. The
c-lattice parameter increased 0.579(1) nm per SnSe bilayer and 0.649(1) nm per Se鈥揟a鈥揝e trilayer (TaSe
2) as
m and
n were varied.
ab-plane X-ray diffraction patterns and transmission electron microscope images revealed a square in-plane structure of the SnSe constituent, a hexagonal in-plane structure for the TaSe
2 constituent, and rotational disorder between the constituent layers. Temperature dependent electrical resistivity, measured on several specimens, revealed metallic behavior, and a simple model is presented to explain the differences in resistivity as a function of
m and
n.
Keywords:
ferecrystals; misfit layer compounds; self-assembly; modulated elemental reactants