III-V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN

详细信息    查看全文

• 作者：Todd G. Deutsch ; Carl A. Koval ; John A. Turner
• 刊名：Journal of Physical Chemistry B
• 出版年：2006
• 出版时间：December 21, 2006
• 年：2006
• 卷：110
• 期：50
• 页码：25297 - 25307
• 全文大小：433K
• 年卷期：v.110,no.50(December 21, 2006)
• ISSN：1520-5207

文摘

Epilayers of single-crystal GaAsPN and GaPN semiconductor samples with varying nitrogen compositionswere photoelectrochemically characterized to determine their potential to serve as water splitting photoelectrodes. The band gap and flatband potentials were determined and used to calculate the valence and conductionband edge energies. The band edges for all compositions appear to be too negative by more than 500 mV forany of the materials to effect light-driven water splitting without an external bias. Corrosion analysis wasused to establish material stability under operating conditions. GaPN was found to show good stability towardphotocorrosion; on the other hand, GaAsPN showed enhanced photocorrosion as compared to GaP.