Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System

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• 作者：Hugh Geaney ; Calum Dickinson ; Colm O鈥橠wyer ; Emma Mullane ; Ajay Singh ; Kevin M. Ryan
• 刊名：Chemistry of Materials
• 出版年：2012
• 出版时间：November 27, 2012
• 年：2012
• 卷：24
• 期：22
• 页码：4319-4325
• 全文大小：421K
• 年卷期：v.24,no.22(November 27, 2012)
• ISSN：1520-5002

文摘

Here, we report the formation of high density arrays of Cu₁₅Si₄ nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu₁₅Si₄ crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 掳C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.

Keywords:

silicide nanowires; copper; high boiling point solvent synthesis