Kinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures
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- 作者：Robert S. Weatherup ; Bruno Dlubak ; Stephan Hofmann
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：November 27, 2012
- 年：2012
- 卷：6
- 期：11
- 页码：9996-10003
- 全文大小：467K
- 年卷期：v.6,no.11(November 27, 2012)
- ISSN：1936-086X
文摘
Low-temperature (600 掳C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio 鈮?.08, and carrier mobilities of 鈮?000 cm2 V鈥? s鈥? on SiO2 support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.