Three-Dimensional Networked Nanoporous Ta2O5鈥?i>x Memory System for Ultrahigh Density Storage

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• 作者：Gunuk Wang ; Jae-Hwang Lee ; Yang Yang ; Gedeng Ruan ; Nam Dong Kim ; Yongsung Ji ; James M. Tour
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：September 9, 2015
• 年：2015
• 卷：15
• 期：9
• 页码：6009-6014
• 全文大小：463K
• ISSN：1530-6992

文摘

Oxide-based resistive memory systems have high near-term promise for use in nonvolatile memory. Here we introduce a memory system employing a three-dimensional (3D) networked nanoporous (NP) Ta₂O_5鈥?i>x structure and graphene for ultrahigh density storage. The devices exhibit a self-embedded highly nonlinear I鈥揤 switching behavior with an extremely low leakage current (on the order of pA) and good endurance. Calculations indicated that this memory architecture could be scaled up to a 鈭?62 Gbit crossbar array without the need for selectors or diodes normally used in crossbar arrays. In addition, we demonstrate that the voltage point for a minimum current is systematically controlled by the applied set voltage, thereby offering a broad range of switching characteristics. The potential switching mechanism is suggested based upon the transformation from Schottky to Ohmic-like contacts, and vice versa, depending on the movement of oxygen vacancies at the interfaces induced by the voltage polarity, and the formation of oxygen ions in the pores by the electric field.