Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires

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• 作者：Hoseok Heo ; Kibum Kang ; Donghun Lee ; Li-Hua Jin ; Hyeon-Jun Back ; Inchan Hwang ; Miseong Kim ; Hyun-Seung Lee ; Byeong-Joo Lee ; Gyu-Chul Yi ; Yong-Hoon Cho ; Moon-Ho Jo
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：February 8, 2012
• 年：2012
• 卷：12
• 期：2
• 页码：855-860
• 全文大小：450K
• 年卷期：v.12,no.2(February 8, 2012)
• ISSN：1530-6992

文摘

Planar defects in compound (III鈥揤 and II鈥揤I) semiconductor nanowires (NWs), such as twin and stacking faults, are universally formed during the catalytic NW growth, and they detrimentally act as static disorders against coherent electron transport and light emissions. Here we report a simple synthetic route for planar-defect free II鈥揤I NWs by tunable alloying, i.e. Cd_1鈥?i>xZn_xTe NWs (0 鈮?x 鈮?1). It is discovered that the eutectic alloying of Cd and Zn in Au catalysts immediately alleviates interfacial instability during the catalytic growth by the surface energy minimization and forms homogeneous zinc blende crystals as opposed to unwanted zinc blende/wurtzite mixtures. As a direct consequence of the tunable alloying, we demonstrated that intrinsic energy band gap modulation in Cd_1鈥?i>xZn_xTe NWs can exploit the tunable spectral and temporal responses in light detection and emission in the full visible range.

Keywords:

Twin defects; stacking faults; II鈭扸I semiconductor; band-gap modulation