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Oxide and Carbide Formation at Titanium/Organic Monolayer Interfaces
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文摘
X-ray photoelectron spectra (XPS) are reported from a series of buried titanium/organic monolayerinterfaces accessed through sample delamination in ultrahigh vacuum (UHV). Conventional characterizationof such buried interfaces requires ion-mill depth profiling, an energetic process that frequently destroysbonding information by chemically reducing the milled material. In contrast, we show that delaminating thesamples at the metal/organic interface in vacuum yields sharp, nonreduced spectra that allow quantitativeanalysis of the buried interface chemistry. Using this UHV delamination XPS, we examine titanium vapordeposited onto a C18 cadmium stearate Langmuir-Blodgett monolayer supported on Au, SiO2, or PtO2substrates. Titanium is widely used as an adhesion layer in organic thick film metallization as well as a topmetal contact for molecular monolayer junctions, where it has been assumed to form a few-atoms-thick Ticarbide overlayer. We establish here that under many conditions the titanium instead forms a few-nanometers-thick Ti oxide overlayer. Both TiO2 and reduced TiOx species exist, with the relative proportiondepending on oxygen availability. Oxygen is gettered during deposition from the ambient, from the organicfilm, and remarkably, from the substrate itself, producing substrate-dependent amounts of Ti oxide and Ticarbide "damage". On Au substrates, up to 20% of the molecular-monolayer carbon formed titanium carbide,SiO2 substrates ~15%, and PtO2 substrates <5%. Titanium oxide formation is also strongly dependent onthe deposition rate and chamber pressure.

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